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| P N P S I L I C O N T RAN S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. H556 T stg Tj PC VCBO VCEO SWITCHING AND AMPLIFIER ABSOLUTE MAXIMUM RATINGS Storage Temperature - Junction Temperature - - - - Collector Dissipation- Collector-Base Voltage- - - - - - ----- - - - - - Ta=25ae(c) -55~150ae 150ae 500mW -80V - -65V -5V -100mA TO-92 Collector-Emitter Voltage- - Emitter-Base Voltage - Collector Current - - - - ----- 1D Collector C 2D Base B 3D Emitter E V EBO IC ELECTRICAL CHARACTERISTICS Characteristics Collector Cut-off Current Ta=25ae(c) Typ Max Unit Test Conditions Symbol Min ICBO HFE VCE(sat1) VCE(sat2) VBE(sat1) VBE(sat2) VBE(ON) -15 110 -90 -250 -0.7 -0.9 -600 -660 150 2 10 -750 800 -300 -650 nA mV mV V V mV MHz dB VCB=-30V, IE=0 VCE=-5V, IC=-2mA IC=-10mA, IB=-0.5mA IC=-100mA, IB=-5mA IC=-10mA, IB=-0.5mA IC=-100mA, IB=-5mA VCE=-5V, IC=-2mA VCE=-5V, IC=-10mA f=100MHz VCE=-5V, IC=-200|I A f=1KHz Rg=2K| DC Current Gain Collector- Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter On Voltage Current Gain-Bandwidth Product Noise Figure fT NF hFE Classification A 110 220 200 B 450 420 C 800 |
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